Ion beam analysis was successfully applied to a novel technique, named selective sublimation process (SSP), for deposition of nanostructured gas-sensing films through reactive sputtering. The method consists of the co-deposition of a mixed oxide, one of which has a relatively low sublimation temperature. Annealing at suitable temperature causes the sublimation of the most volatile compound, leaving a layer with adjustable composition. The appropriate choice of thermal treatments and the consequent tailoring of the composition play a crucial role in the determination of the microstructural properties. We developed a model based on diffusion equations that provides a useful guide to control the deposition and processing parameters and we applied the model on the systems TiO2-WO3 and TiO2-MoO3. Rutherford backscattering (RBS) was demonstrated to be effective for the characterization of the diffusion and sublimation processes during SSP. Experimental results fully agree with theoretical prediction, and allowed the calculation of all the parameters involved in SSP. (c) 2006 Elsevier B.V. All rights reserved.
|Data di pubblicazione:||2006|
|Titolo:||Application of ion beam analysis to the selective sublimation processing of thin films for gas sensing|
|Rivista:||NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/j.nimb.2006.04.016|
|Appare nelle tipologie:||2.1 Articolo su rivista |