A magnetic memory device includes a conductive line extended in a first direction, a magnetic track line provided on the conductive line and extended in the first direction, and a non-magnetic line provided on the magnetic track line and extended in the first direction. The magnetic track line includes a lower magnetic layer and an upper magnetic layer stacked on the conductive line, an exchange coupling layer between the lower and upper magnetic layers, and a spacer layer between the exchange coupling layer and the upper magnetic layer. The exchange coupling layer is in contact with a bottom surface of the spacer layer, and the lower and upper magnetic layers are antiferromagnetically coupled with each other by the exchange coupling layer.
Magnetic memory device
Andrea Migliorini;
2024
Abstract
A magnetic memory device includes a conductive line extended in a first direction, a magnetic track line provided on the conductive line and extended in the first direction, and a non-magnetic line provided on the magnetic track line and extended in the first direction. The magnetic track line includes a lower magnetic layer and an upper magnetic layer stacked on the conductive line, an exchange coupling layer between the lower and upper magnetic layers, and a spacer layer between the exchange coupling layer and the upper magnetic layer. The exchange coupling layer is in contact with a bottom surface of the spacer layer, and the lower and upper magnetic layers are antiferromagnetically coupled with each other by the exchange coupling layer.I documenti in ARCA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.



