A magnetic memory device includes a conductive line extended in a first direction, a magnetic track line provided on the conductive line and extended in the first direction, and a non-magnetic line provided on the magnetic track line and extended in the first direction. The magnetic track line includes a lower magnetic layer and an upper magnetic layer stacked on the conductive line, an exchange coupling layer between the lower and upper magnetic layers, and a spacer layer between the exchange coupling layer and the upper magnetic layer. The exchange coupling layer is in contact with a bottom surface of the spacer layer, and the lower and upper magnetic layers are antiferromagnetically coupled with each other by the exchange coupling layer.

Magnetic memory device

Andrea Migliorini;
2024

Abstract

A magnetic memory device includes a conductive line extended in a first direction, a magnetic track line provided on the conductive line and extended in the first direction, and a non-magnetic line provided on the magnetic track line and extended in the first direction. The magnetic track line includes a lower magnetic layer and an upper magnetic layer stacked on the conductive line, an exchange coupling layer between the lower and upper magnetic layers, and a spacer layer between the exchange coupling layer and the upper magnetic layer. The exchange coupling layer is in contact with a bottom surface of the spacer layer, and the lower and upper magnetic layers are antiferromagnetically coupled with each other by the exchange coupling layer.
2024
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10278/5115221
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