We report an on-chip integrated metal graphene−silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal−silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.
On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain
De Fazio D;
2016-01-01
Abstract
We report an on-chip integrated metal graphene−silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal−silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.
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