Self-powered photodetectors operating in the UV-visible-NIR window made of environmentally friendly, earth abundant, and cheap materials are appealing systems to exploit natural solar radiation without external power sources. In this study, we propose a new p-n junction nanostructure, based on a ZnO-Co3O4 core-shell nanowire (NW) system, with a suitable electronic band structure and improved light absorption, charge transport, and charge collection, to build an efficient UV-visible-NIR p-n heterojunction photodetector. Ultrathin Co3O4 films (in the range 1-15 nm) were sputter-deposited on hydrothermally grown ZnO NW arrays. The effect of a thin layer of the Al2O3 buffer layer between ZnO and Co3O4 was investigated, which may inhibit charge recombination, boosting device performance. The photoresponse of the ZnO-Al2O3-Co3O4 system at zero bias is 6 times higher compared to that of ZnO-Co3O4. The responsivity (R) and specific detectivity (D) of the best device were 21.80 mA W-1 and 4.12 × 1012 Jones, respectively. These results suggest a novel p-n junction structure to develop all-oxide UV-vis photodetectors based on stable, nontoxic, low-cost materials.

Self-Powered Photodetectors Based on Core-Shell ZnO-Co3O4 Nanowire Heterojunctions

Rigoni F.;Vomiero A.
2019

Abstract

Self-powered photodetectors operating in the UV-visible-NIR window made of environmentally friendly, earth abundant, and cheap materials are appealing systems to exploit natural solar radiation without external power sources. In this study, we propose a new p-n junction nanostructure, based on a ZnO-Co3O4 core-shell nanowire (NW) system, with a suitable electronic band structure and improved light absorption, charge transport, and charge collection, to build an efficient UV-visible-NIR p-n heterojunction photodetector. Ultrathin Co3O4 films (in the range 1-15 nm) were sputter-deposited on hydrothermally grown ZnO NW arrays. The effect of a thin layer of the Al2O3 buffer layer between ZnO and Co3O4 was investigated, which may inhibit charge recombination, boosting device performance. The photoresponse of the ZnO-Al2O3-Co3O4 system at zero bias is 6 times higher compared to that of ZnO-Co3O4. The responsivity (R) and specific detectivity (D) of the best device were 21.80 mA W-1 and 4.12 × 1012 Jones, respectively. These results suggest a novel p-n junction structure to develop all-oxide UV-vis photodetectors based on stable, nontoxic, low-cost materials.
File in questo prodotto:
File Dimensione Formato  
Ghamgosar Self-powered ZnO-Co3O4 photodetector ACS AMI 2019, 11, 23454.pdf

non disponibili

Tipologia: Versione dell'editore
Licenza: Accesso chiuso-personale
Dimensione 3.67 MB
Formato Adobe PDF
3.67 MB Adobe PDF   Visualizza/Apri

I documenti in ARCA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10278/3716781
Citazioni
  • ???jsp.display-item.citation.pmc??? 3
  • Scopus 38
  • ???jsp.display-item.citation.isi??? 38
social impact