Transparent nanoscale-film heterojunctions based on Cu2O and ZnO were fabricated by atomic layer deposition and reactive magnetron sputtering. The constitutive layers exhibit high crystalline quality and a local epitaxial relation between Cu2O and ZnO was achieved with  Cu2O ||  ZnO and  Cu2O ||  ZnO as evidenced by high resolution transmission electron microscopy and. Cu2O films show very low resistivity and high mobility values of 9-150 ω cm and 19 cm2/V s, respectively. The Cu2O/ZnO heterojunctions exhibit a nonlinear rectifying behavior characteristic of a p-n junction, self-powered photoresponse under 1 Sun illumination and an average transmittance of 73% in the visible region of the electromagnetic spectrum. These results are promising for all-oxide transparent electronics, photodetection and photovoltaic applications.
|Titolo:||Semi-Transparent p-Cu2O/n-ZnO Nanoscale-Film Heterojunctions for Photodetection and Photovoltaic Applications|
|Data di pubblicazione:||2019|
|Appare nelle tipologie:||2.1 Articolo su rivista |
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|Claudia de Melo Semi transparent p-Cu2O n-ZnO heterojunction.pdf||Versione dell'editore||Accesso chiuso-personale||Riservato|