Ion beam induced luminescence (IBIL) spectra of pure LiF under irradiation by a 2 MeV proton beam were analyzed as a function of the dose in order to deepen the kinetic mechanisms underlying the formation of luminescent point defects. The intensity evolution with dose at several emission wavelengths has been studied within a wide spectral interval, from ultraviolet (UV) to near infrared (NIR), and their different change rates have been correlated to the electronic defect formation processes. The intensity at few selected wavelengths was analyzed with a multiple linear regression (MLR) method in order to demonstrate that a linear calibration curve can be obtained and that an on-line optical dose monitor for ion beams can be realized.
Ion beam induced luminescence (IBIL) spectra of pure LiF under irradiation by a 2 MeV proton beam were analyzed as a function of the dose in order to deepen the kinetic mechanisms underlying the formation of luminescent point defects. The intensity evolution with dose at several emission wavelengths has been studied within a wide spectral interval, from ultraviolet (UV) to near infrared (NIR), and their different change rates have been correlated to the electronic defect formation processes. The intensity at few selected wavelengths was analyzed with a multiple linear regression (MLR) method in order to demonstrate that a linear calibration curve can be obtained and that an on-line optical dose monitor for ion beams can be realized.
Ion beam induced luminescence analysis of defect evolution in lithium fluoride under proton irradiation
VALOTTO, Gabrio;
2015-01-01
Abstract
Ion beam induced luminescence (IBIL) spectra of pure LiF under irradiation by a 2 MeV proton beam were analyzed as a function of the dose in order to deepen the kinetic mechanisms underlying the formation of luminescent point defects. The intensity evolution with dose at several emission wavelengths has been studied within a wide spectral interval, from ultraviolet (UV) to near infrared (NIR), and their different change rates have been correlated to the electronic defect formation processes. The intensity at few selected wavelengths was analyzed with a multiple linear regression (MLR) method in order to demonstrate that a linear calibration curve can be obtained and that an on-line optical dose monitor for ion beams can be realized.I documenti in ARCA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.