Er-doped dielectric films are materials characterized by the emission of an intense photoluminescence signal at lambda = 1.54 micron. The shape and intensity of the radiative emission of Er3+ ions may depend on the compositional and structural characteristics of the host dielectric matrix. With a suitable choice of the preparation parameters, we were able to synthesize luminescence dielectric thin films of crystalline alumina doped with erbium atoms by means of radiofrequency magnetron co-sputtering deposition. The samples were mainly characterized by X-ray diffraction, photoluminescence spectroscopy, and Rutherford backscattering spectrometry. The films show interesting changes of the 1.54 micron emission band shape as a function of the optical activation annealing temperature.

Er-doped alumina crystalline films deposited by radiofrequencymagnetron co-sputtering

CATTARUZZA, Elti;BACK, MICHELE;BATTAGLIN, Giancarlo;RIELLO, Pietro;TRAVE, Enrico
2011-01-01

Abstract

Er-doped dielectric films are materials characterized by the emission of an intense photoluminescence signal at lambda = 1.54 micron. The shape and intensity of the radiative emission of Er3+ ions may depend on the compositional and structural characteristics of the host dielectric matrix. With a suitable choice of the preparation parameters, we were able to synthesize luminescence dielectric thin films of crystalline alumina doped with erbium atoms by means of radiofrequency magnetron co-sputtering deposition. The samples were mainly characterized by X-ray diffraction, photoluminescence spectroscopy, and Rutherford backscattering spectrometry. The films show interesting changes of the 1.54 micron emission band shape as a function of the optical activation annealing temperature.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10278/28764
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