Methods to generate spin-polarized electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we report the observation from spin- and angle-resolved photoemission spectroscopy of spin-polarized bulk states in the centrosymmetric transition-metal dichalcogenide WSe 2. Mediated by a lack of inversion symmetry in constituent structural units of the bulk crystal where the electronic states are localized, we show how spin splittings up to 0.5 eV result, with a spin texture that is strongly modulated in both real and momentum space. Through this, our study provides direct experimental evidence for a putative locking of the spin with the layer and valley pseudospins in transition-metal dichalcogenides, of key importance for using these compounds in proposed valleytronic devices.

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor

Mazzola F.;
2014-01-01

Abstract

Methods to generate spin-polarized electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we report the observation from spin- and angle-resolved photoemission spectroscopy of spin-polarized bulk states in the centrosymmetric transition-metal dichalcogenide WSe 2. Mediated by a lack of inversion symmetry in constituent structural units of the bulk crystal where the electronic states are localized, we show how spin splittings up to 0.5 eV result, with a spin texture that is strongly modulated in both real and momentum space. Through this, our study provides direct experimental evidence for a putative locking of the spin with the layer and valley pseudospins in transition-metal dichalcogenides, of key importance for using these compounds in proposed valleytronic devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10278/5011760
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