For application in the automotive powertrain, a reliable, high-temperature operation of SiC power semiconductors is a promising feature. However, high-temperature operation is not only limited by the device capabilities, but also by the packaging technologies used. In this paper, a novel power semiconductor module packaging concept for the automotive powertrain is demonstrated. The concept is based on Ag-sintering, heavy Cu wire interconnection and ultrasonic welded terminals. All solder-free interconnects provide superior reliability in order to meet future automotive requirements, e.g., 1000 temperature cycles in the temperature range -40 deg C to 175 deg C, high temperature storage at 200 deg C /1000 hours and excellent power cycling reliability, e.g. > 1 million cycles at DeltaT = 100 K, Tj,max = 200 deg C. In addition, epoxy molded modules in half-bridge configuration are designed for environmental robustness, easy inverter integration and low costs. The current power module package can accommodate both SiC and Si chips to offer a simple scalability for inverter classes in the 150 - 300 kW power range.

Reliable High-temperature SiC Power Module for Automotive Traction Inverter

Giovanni Antonio Salvatore;
2019-01-01

Abstract

For application in the automotive powertrain, a reliable, high-temperature operation of SiC power semiconductors is a promising feature. However, high-temperature operation is not only limited by the device capabilities, but also by the packaging technologies used. In this paper, a novel power semiconductor module packaging concept for the automotive powertrain is demonstrated. The concept is based on Ag-sintering, heavy Cu wire interconnection and ultrasonic welded terminals. All solder-free interconnects provide superior reliability in order to meet future automotive requirements, e.g., 1000 temperature cycles in the temperature range -40 deg C to 175 deg C, high temperature storage at 200 deg C /1000 hours and excellent power cycling reliability, e.g. > 1 million cycles at DeltaT = 100 K, Tj,max = 200 deg C. In addition, epoxy molded modules in half-bridge configuration are designed for environmental robustness, easy inverter integration and low costs. The current power module package can accommodate both SiC and Si chips to offer a simple scalability for inverter classes in the 150 - 300 kW power range.
PCIM Asia 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10278/5009062
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