Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors have been designed for X-ray applications and the prototypes with 1×1 mm2 pixel size have been fabricated. The prototype applies a newly designed DEPFET structure with drain-clear-gate (DCG) as the readout element of a silicon drift detector. Therefore, the size of Macropixel detectors can be adjusted to match the requirement of the instrument on spatial resolution from about 50×50 μm2 to several square millimeters. The measured energy resolution for Mn-Kα peak at room temperature is 191 eV with a prototype single pixel. In this paper we present the DEPFET Macropixel detector concept as well as the static and dynamic test results. © 2006.
Development of DEPFET Macropixel detectors
Porro M.;
2006-01-01
Abstract
Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors have been designed for X-ray applications and the prototypes with 1×1 mm2 pixel size have been fabricated. The prototype applies a newly designed DEPFET structure with drain-clear-gate (DCG) as the readout element of a silicon drift detector. Therefore, the size of Macropixel detectors can be adjusted to match the requirement of the instrument on spatial resolution from about 50×50 μm2 to several square millimeters. The measured energy resolution for Mn-Kα peak at room temperature is 191 eV with a prototype single pixel. In this paper we present the DEPFET Macropixel detector concept as well as the static and dynamic test results. © 2006.
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