The wider bandgap and more complex semiconductor-dielectric interface of SiC-MOSFETs compared to Si-MOSFETs results in higher threshold voltage instability under normal operating conditions. This effect due to the capture of electrons by the interface traps needs to be well assessed, since an increased negative shift of the threshold voltage could increase the leakage current and limit both performance and reliability. In this work, we study this threshold voltage hysteresis effects using fast ID-VG measurements to better understand this issue and compare state-of-the-art commercially available TO-packaged 1.2 kV SiC-MOSFETS from different manufacturers in order to benchmark the different suppliers.
Threshold Voltage Stability of 1200 V SiC MOSFETs
Salvatore GA
2020-01-01
Abstract
The wider bandgap and more complex semiconductor-dielectric interface of SiC-MOSFETs compared to Si-MOSFETs results in higher threshold voltage instability under normal operating conditions. This effect due to the capture of electrons by the interface traps needs to be well assessed, since an increased negative shift of the threshold voltage could increase the leakage current and limit both performance and reliability. In this work, we study this threshold voltage hysteresis effects using fast ID-VG measurements to better understand this issue and compare state-of-the-art commercially available TO-packaged 1.2 kV SiC-MOSFETS from different manufacturers in order to benchmark the different suppliers.
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