The interfacial coupling in van der Waals (vdWs) heterostructures can effectively modulate the device performance. In this study, we demonstrate a high performance infrared detector fabricated by direct epitaxial growth of Te nanowires onto a MoS2 monolayer. Such directly grown Te/MoS2 heterostructures show much stronger interfacial coupling than artificially transferred Te/MoS2 hybrids, as evidenced from their Raman and photoluminescence spectra. The strong vdWs interfacial coupling leads to a high performance infrared detector with both ultrahigh photoresponsivity (>103 A/W) and rapid response time (τrising = 15 ms) at the telecommunication wavelength of 1550 nm. The anti-bipolar and rectification behaviors observed in the strongly coupled grown Te-MoS2 heterojunction further confirm the effective interfacial coupling. In contrast, the weakly coupled transferred Te-MoS2 heterojunction that is obtained by artificial transfer exhibits negligible anti-bipolar behavior and slight rectification behavior. These findings indicate that the coupled vdWs hybrid structures have great potential for achieving high performance photodetectors.

Strongly coupled van der Waals heterostructures for high-performance infrared phototransistor

Shifa T. A.
Writing – Review & Editing
;
2019-01-01

Abstract

The interfacial coupling in van der Waals (vdWs) heterostructures can effectively modulate the device performance. In this study, we demonstrate a high performance infrared detector fabricated by direct epitaxial growth of Te nanowires onto a MoS2 monolayer. Such directly grown Te/MoS2 heterostructures show much stronger interfacial coupling than artificially transferred Te/MoS2 hybrids, as evidenced from their Raman and photoluminescence spectra. The strong vdWs interfacial coupling leads to a high performance infrared detector with both ultrahigh photoresponsivity (>103 A/W) and rapid response time (τrising = 15 ms) at the telecommunication wavelength of 1550 nm. The anti-bipolar and rectification behaviors observed in the strongly coupled grown Te-MoS2 heterojunction further confirm the effective interfacial coupling. In contrast, the weakly coupled transferred Te-MoS2 heterojunction that is obtained by artificial transfer exhibits negligible anti-bipolar behavior and slight rectification behavior. These findings indicate that the coupled vdWs hybrid structures have great potential for achieving high performance photodetectors.
2019
114
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10278/3742834
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