We demonstrate magnetoresistance (MR) in excess of 4% in FePt/CoFe/Cu/CoFe/NiFe pseudo spin valves based on L1(0) (111)-oriented FePt fixed layers with a 36 degrees out-of-plane tilted magnetization. The high MR is achieved by increasing the spin polarization at the Cu interfaces, using thin CoFe, and optimizing the FePt growth and Cu interface quality using Ta and Ta/Pt underlayers. We observe well-separated switching of the FePt/CoFe fixed layer and the CoFe/NiFe free layer, suggesting that CoFe is rigidly exchange coupled to FePt and NiFe in the respective layers.
Pseudo spin valves based on L1(0) (111)-oriented FePt fixed layers with tilted anisotropy
Bonetti S;
2009-01-01
Abstract
We demonstrate magnetoresistance (MR) in excess of 4% in FePt/CoFe/Cu/CoFe/NiFe pseudo spin valves based on L1(0) (111)-oriented FePt fixed layers with a 36 degrees out-of-plane tilted magnetization. The high MR is achieved by increasing the spin polarization at the Cu interfaces, using thin CoFe, and optimizing the FePt growth and Cu interface quality using Ta and Ta/Pt underlayers. We observe well-separated switching of the FePt/CoFe fixed layer and the CoFe/NiFe free layer, suggesting that CoFe is rigidly exchange coupled to FePt and NiFe in the respective layers.
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