In this work we present in situ investigations on the increase of the hcp-to-fcc transition temperature for Co with respect to the bulk value (420 °C) when nanoclusters are considered. Starting from Co:SiO2 composites obtained by ion implantation with average Co cluster size of about 5 nm, a transition temperature between 800 °C and 900 °C is found upon thermal annealing in vacuum by in situ transmission electron microscopy. Preliminary results on electron irradiation to promote the transition at lower temperatures are presented.

Size dependent hcp-to-fcc transition temperature in Co nanoclusters obtained by ion implantation in silica

MATTEI, Giovanni;MAZZOLDI, Paolo;BATTAGLIN, Giancarlo;CANTON, Patrizia;CATTARUZZA, Elti;
2006

Abstract

In this work we present in situ investigations on the increase of the hcp-to-fcc transition temperature for Co with respect to the bulk value (420 °C) when nanoclusters are considered. Starting from Co:SiO2 composites obtained by ion implantation with average Co cluster size of about 5 nm, a transition temperature between 800 °C and 900 °C is found upon thermal annealing in vacuum by in situ transmission electron microscopy. Preliminary results on electron irradiation to promote the transition at lower temperatures are presented.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10278/23901
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