An all-enhancement operational amplifier operating at 5 V and comprising 16 n-type amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) is fabricated on a 50 mu m thick flexible polyimide substrate. The operational amplifier has an open loop voltage gain of 18.7 dB and a unity-gain frequency of 472 kHz while the common-mode rejection ratio (CMMR) is larger than 40 dB. The mechanical flexibility of the amplifier is demonstrated by bending the circuit to a radius of 5 mm, which corresponds to a tensile strain of 0.5% parallel to the TFT channels. The bent amplifier shows the same output behavior as when flat. The power consumption of the operational amplifier is 900 mu W, regardless whether the circuit is flat or bent.

IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm

Salvatore, GA;
2013

Abstract

An all-enhancement operational amplifier operating at 5 V and comprising 16 n-type amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) is fabricated on a 50 mu m thick flexible polyimide substrate. The operational amplifier has an open loop voltage gain of 18.7 dB and a unity-gain frequency of 472 kHz while the common-mode rejection ratio (CMMR) is larger than 40 dB. The mechanical flexibility of the amplifier is demonstrated by bending the circuit to a radius of 5 mm, which corresponds to a tensile strain of 0.5% parallel to the TFT channels. The bent amplifier shows the same output behavior as when flat. The power consumption of the operational amplifier is 900 mu W, regardless whether the circuit is flat or bent.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in ARCA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10278/5000906
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 70
  • ???jsp.display-item.citation.isi??? 65
social impact